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Wyniki 1-1 spośród 1 dla zapytania: authorDesc:"JANUSZ WOŹNY"

» Hall Mobility in 4H-SiC, measurements and Monte Carlo simulation

JANUSZ WOŹNY

GESUALDO DONNARUMMA

ZBIGNIEW LISIK

Silicon Carbide is used as material for electronics working in difficult conditions (temperature, power densities, high speed). Although its technology can be almost considered as matured commercial CAD tools e.g. like Sentaurus TCAD suffer from not-well established models, e.g. lack of robust model for breakdown modelling [1]. Also parameters of the models are not measured as accurate as for silicon. For instance drift velocity values are mostly quoted only from Khan and Cooper measurements [2]. Knowledge about material parameters for wide range of environmental conditions (various temperatures, electric fields, etc ...) is required for proper functioning of CAD tools. One way of retrieving the values is to do measurements which is impossible for all combination of environmental variables. Second possibility is to use very accurate models and obtain macroscopic parameters from simulation. Here we use the Monte Carlo approach to obtain Hall mobility for 4H-SiC. Results were verified with measurements done with Van Der Pauw method. Good accuracy of modelling was observed thus the Monte Carlo simulations can be seen as a[...] więcej»
w zeszycie ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA 2011/3

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