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Wyniki 1-1 spośród 1 dla zapytania: authorDesc:"BRONISŁAW SŁowi Ński"

» Formation of molecular ion beams for ion implantation purposes

KRZYSZTOF Kiszczak

Ion implantation has found a wide utility both in technology and scientific research. This method is based on the penetration of ions, accelerated to the energy from tens to hundreds of keV (nowadays to a few MeV) into a solid. Interaction of quick ions with the surface of solid targets causes many effects, such as sputtering of target material, electron emission, chemical reactions, excitation and ionization of target atoms, shift of lattice atoms from their equilibrium positions and, first of all, implantation of incident atoms into the lattice of the targets. As a result, changes in physicochemical properties of bombarded materials are observed. In the case of metal targets these changes concern mainly the tribologycal properties, such as friction, hardness, wearability and the geometric structure of the irradiated surface (for example, roughness). All the above-mentioned properties are important in many fields of science and technology, such as precision mechanics, optics, nuclear power and even medicine. Thus, it is obvious that ion implantation plays an important role in the modern world. Implantation into solid targets is carried out at special facilities, called ion implanters [1]. However, in many cases of implantation, it is possible to use electromagnetic isotope separators, designed mainly for nuclear physics purposes [2]. Although the ion current limit is appropriate for implantation purposes in such separators, very often the ion energy region does not meet the experimental requirements since the accelerating voltage used in separators is usually 30…100 keV. To increase the implantation energy in mass-separators it is recomended to use multicharged ions for which E = neU, where n is the ionization order, e is the electron charge, U is the ion accelerating voltage. On the other sides for low energy implantation it is possible to use molecular ions (usually diatomic molecules), as on hitting a target, the mo[...] więcej»
w zeszycie ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA 2011/11

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