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» Self assembled InN quantum structures in Si3N4 films produced by flash lamp processing

SŁAWOMIR Prucnal

The III-V semiconductors with a direct band gap are widely used in optoelectronics e.g. as the light emitters operated in the wavelength range from ultra-violet to the infrared. Other applications of III-V compounds include single or tandem solar cells, high electron mobility transistors (HEMTs) and colour displays [1-3]. The most wide band gap variation offers group III-nitrides (AlGaIn)N changing form 6.2 eV for AlN down to 0.7-0.9 for InN [4, 5]. Compared to all other group-III nitrides, InN is characterized by the highest carrier mobility, the lowest electron effective mass and the highest saturation velocity. Therefore InN is the best candidate for high speed and high frequency electronic device applications. The fundamental properties of the InN crystals are intensively investigated since three decades. For a long time the band gap of InN was considered to be around 2 eV but detailed studies reveal that it is in the range of 0.7-1.0 eV, depending on the crystal quality and crystallography [6-8]. One of the most common techniques used for InN growth is molecular beam epitaxy. Due to very low dissociation temperature of InN and the lack of substrates with the same lattice parameter and similar thermal expansion coefficient the epitaxial growth of high quality single crystalline InN is very difficult. One of the best substrates used for InN growth is the (111) oriented silicon with a lattice mismatch of ~ 8% to InN(0001) [4]. The advantage of Si substrate over other materials is low cost, high crystal quality, thermal conductivity and the fact that it offers possibility to integrate InN directly with silicon technology. The key problem is that the MBE technique is time and costs consuming and not suitable for ultra-large-scale integrated (ULSI) circuits. In this paper we present the formation of InN crystalline structure in the Si3N4 films by ion implantation and millisecond flash lamp annealing. Samples were characterized b[...] więcej»
w zeszycie ELEKTRONIKA - KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA 2011/11

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