Wyniki 1-1 spośród 1 dla zapytania: authorDesc:"Antoni Bukaluk"

Efficiency of chemometric methodology for characterization of In/CuPc films on HOPG and InSb based on ultraviolet photoelectron spectra DOI:10.15199/28.2016.5.5

  Photoemission spectroscopy offers the possibility to study on the interface formation of copper phthalocyanine exposed to indium. In this paper, we demonstrate the potential of using chemometric treatment in the characterization of In/CuPc films on HOPG and InSb substrates based on ultraviolet photoelectron spectra (UPS). The main advantage of using chemometric methods is that there is no need to construct of line intensities models to gain valuable information. The experimental data sets have a bilinear mathematical structure and, therefore, they can be subjected to principal component analysis (PCA). The results of PCA showed that the principal component loadings provide useful information about the changes in the line intensities and the peak positions. The obtained graphical models of data, in a simple way, enabled the determination of new supplementary information concerning the role of the individual chemical compounds in terms of In/CuPc interface formation. Moreover, chemometric classification method such as cluster analysis (CA) allowed identifying the subgroups of samples according to a specific property of formed components. Key words: metal-organic interfaces, copper phthalocyanine, chemometrics.1. INTRODUCTION Among the wide range of metal-organic semiconductor interfaces which has been reported in the literature, the phthalocyanines family has received a lot of attention due to their biological significance, catalytic properties and technological interest. Copper phthalocyanine often referred to as CuPc, is well known material for their semiconducting behaviour. The nature of its chemical and electronic structure has been the topic of numerous research in recent years [1÷4]. A great deal of the attention has been paid for studying interface formation at deposition of different metals on CuPc thin films, due to their promising optical and electrical properties [5÷8]. Several papers refer to interface formation between copper[...]

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