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Re-crystallization of Silicon during Rapid Thermal Treatment DOI:10.15199/48.2018.05.35

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The surface finish of the silicon wafers is one of the fundamental factors, determining quality and reliability of the integrated circuits. In view of this a great deal of attention is attributed to the issues of its preparation prior to the process of their formation. As a result of the mechanical grinding and polishing, a disrupted layer of the chippings, cracks, abrasive particles, dislocations, scratches, surface adsorbed organic and inorganic impurities forms on the wafer’s surface. One of the prospective ways of enhancing the surface properties of silicon may be its solid phase re-crystallization with application of the rapid thermal treatment with the second long pulses, ensuring the preheating of the wafer up to 1000ºC and above, which is usually used for recrystallization of the amorphous layers of silicon, formed during the ion doping [1-4]. Experimental Influence of the rapid thermal treatment on the structure of the disrupted layer was under investigation with application of the methods of Auger-spectroscopy, electron microscopy, diffraction reflection curves, spectral ellipsometry. It was by means of the Auger-spectroscopy with the precision sputtering of the surface silicon layers and registration of the exit intensity of the Auger-electrons from the silicon surface, that the dependence was plotted of the quantity of the exiting electrons on the sputtering time duration with determination of the disrupted layer depth. The methods of the electron microscopy and the diffraction reflection curves were used to perform investigations of the surface structure of the silicon wafers prior and after the rapid thermal treatment. The optical characteristics of the [...]

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