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Characterization of lanthanum lutetium oxide thin films grown by pulsed laser deposition

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Exposure to ionizing can occur in the range of industries, medical institution, educational and research establishments and nuclear fuel cycling facilities. Adequate radiation protection is essential for the safe and acceptable use of radiation, radioactive materials and nuclear energy [1]. Due to large number of different applications, there are many alternatives of materials and design for radiation sensors or detectors. To optimize the trade-offs that exist among the requirements, different materials, geometric arrangements and different physical detection techniques are used [2]. A number of efforts were devoted to investigate the influence of radiation on the properties of metal-oxide materials [3÷5]. Metal oxides are interesting for their low-cost and simplicity. Properties of metal oxides materials are directly or indirectly connected to the presence of defects. In particular oxygen vacancies determine the optical, electronic and transport properties of the materials and usually dominate the chemistry of its surface. The promising materials for gamma sensor applications are TiO2, TeO2, NiO, CeO2, In2O3, LaFeO3, LaLuO3 [2, 3, 6, 7]. The gamma detecting oxide materials can be in the form of both: thin or thick films [3]. Only crystallized LaLuO3 exhibits luminescence properties that could be used in detection. There are a wide variety of techniques for deposition of thin films. The examples are thermal evaporation (also known as vacuum vapour deposition), electron-beam evaporation, magnetron sputtering, chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) [8÷10]. Pulsed laser deposition was already used to grow amorphous LaLuO3, mainly as high-K gate dielectrics [11], but barely crystallized LaLuO3 films were grown by this technique. For this reason, in the present work to obtain crystallized LaLuO3 thin films PLD technique was used and the morphology and chemical composition of thin films were investigated. I[...]

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