Wyniki 1-3 spośród 3 dla zapytania: authorDesc:"Fadei KOMAROV"

Simulation of neutron irradiation influence on p-n-p bipolar transistor characteristics DOI:10.15199/48.2016.11.57

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We have developed numerical model and software to simulate the ionizing radiation influence on the bipolar transistor parameters. The software allows to calculate the input and output characteristics, the current transmission coefficient and other parameters under the irradiation for various temperatures, base and collector voltages. Streszczenie. Opracowaliśmy model numeryczny i oprogramowanie do symulacji wpływu promieniowania jonizującego na parametry tranzystorów bipolarnych. Oprogramowanie pozwala obliczyć parametry wejściowe i wyjściowe, aktualny współczynnik transmisji i inne parametry na podstawie napromieniowania dla różnych temperatur, napięć bazy i kolektora. (Symulacja wpływu promieniowania neutronowego na charakterystyki p-n-p tranzystorów bipolarnych). Keywords: bipolar transistors, neutron flow, transmission coefficient, output characteristics. Słowa kluczowe: tranzystor bipolarny, przepływ neutronów, współczynnik transmisji, charakterystyki wyjściowe. Introduction Nowadays, the bipolar transistors are extensively used in many sectors of micro- and nanoelectronics as the amplifiers, generators, keys, regulators etc. Their operation in the radiation environment, e.g. in the open space, on the nuclear power plants, during the nuclear blast etc. can be difficult through the radiation-induced changes in operating parameters. The forecasting of these changes is a one of the main problems of development and production of the radiadiation-resistant hardware. The computer simulation is the most optimal method to resolve this problem. The subject We consider the p-n-p bipolar transistor that is the part of integral structure shown in figure 1. Fig.1.[...]

Optical properties of Ti-Al-C-N films: effects of deposition parameters and carbon content DOI:10.15199/48.2018.06.14

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Transition metal nitrides and carbides are attractive materials for technological applications such as hard and high corrosion resistance coatings in machining and cutting tools, diffusion barriers in microelectronics, layers of solar selective absorbers [1-3]. Transition metal carbonitrides Ti-Al-C-N can be considered as perspective materials with high termal stability, exellent oxidation resistance, enchanced mechanical performance and good optical properties. The aim of this study is to investigate the influence of the carbon content and deposition parameters of reactive magnetron sputtering on Ti-Al-C-N films composition, morphology and optical properties. Experimental details The vacuum chamber was pumped down to a base pressure of 5·10-4 Pa. Prior to deposition the substrates were cleaned by ion etching in argon plasma at 6.0·10-2 Pa, wherein the discharge current was 20 mA, the discharge voltage was 2.4 kV, the cleaning time was 5 min. Ti-Al-C-N films have been deposited by a reactive magnetron sputtering of Ti-Al (Al doped with 4% Cu and 1% Si) mosaic target under an environment with a mixture of argon, nitrogen and acetylene gases at the pressure of 0.71 Pa and at the DC power of 450 W. Sublayers of TiAl and TiAlN were deposited onto substrates for the purpose to improve coatings adhesion. The deposition time was 30 min. Silicon and calcium-silicate glass were used as substrates. In order to investigate the influence of deposition parameters on the structural and optical properties of Ti-Al-C-N films, deposition processes were conducted at four different technological regimes presented in Table 1. The elemental composition and structure of the films were determined by energy dispersive X-ray analysis (EDX, X-ray detector manufactured by Princeton Gamma-Tech, Inc) and scanning electron microscopy (Hitachi S-4800), respectively. The phase composition of the films was studied by X-ray diffraction (XRD) [...]

Origin of visible photoluminescence of Si-rich and N-rich silicon nitride films DOI:10.15199/48.2016.08.50

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Amorphous Si-rich and N-rich silicon nitride films were deposited by plasma-enhanced chemical vapour deposition (PECVD) and, subsequently, annealed at 600, 800 and 1100ºC in Ar ambient. The different dependences of photoluminescence (PL) spectra on annealing temperatures were revealed for Si-rich and N-rich SiNx films. The origin of PL is discussed on the basis of band diagram depending on the x value and taking into account radiative defects in amorphous SiNx films. The PL spectra transformation after thermal treatment is explained by structural modification via competing process of creation and annealing defects. Streszczenie. Amorficznie wzbogacony Si i N warstwy azotku krzemu zostały utworzony przez wspomagane plazmą osadzanie chemiczne z fazy gazowej (PECVD), a następnie wygrzany w temperaturze 600, 800 i 1100ºC w atmosferze Ar. Różne zależności widm fotoluminescencji (PL) w temperaturze wygrzewania zostały ujawnione dla wzbogaconych Si i N warstw SiNx. Pochodzenie PL omówiono w oparciu o schemat pasma w zależności od wartości x, z uwzględnieniem defektów radiacyjnych amorficznej warstwy SiNx. Transformacji widma PL po obróbce cieplnej jest wyjaśniona przez strukturalną modyfikację spowodowaną konkurencyjnymi procesami tworzenia się i wygrzewania defektów. (Pochodzenie widocznych fotoluminescencyjnych warstw azotku krzemu wzbogaconych Si i N). Keywords: visible photoluminescence, spectra transformation, amorphous films, silicon, light-emission. Słowa kluczowe: widma fotoluminescencyjne, widma transformacji, amorficzne warstwy, emisja światła. Introduction Amorphous silicon nitride films have been long used for a wide variety of applications in microelectronics as the gate dielectric in thin film transistors, charge storage medium in non-volatile memories. Recently, the interest in SiNx as an appropriate material for future generation of optoelectronic devices has risen again. This application requires an understanding of [...]

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