Wyniki 1-2 spośród 2 dla zapytania: authorDesc:"Piotr Biegański"

Photoelectrical properties of photovoltaic structures based on CdTe/ZnO


  Photovoltaics continues to be one of the fastest growing industries, with annual increase beyond 40% [1]. Photovoltaic (PV) solar cells convert incoming solar radiation directly into electricity and produce electricity as each conventional source of energy, but they are very attractive for they are environment friendly. Zinc oxide (ZnO) is nowadays worldwide extensively studied for optoelectronics and photovoltaics application. It is predicted that there will be a mass production of conducting ZnO layers as transparent electrodes in solar cells. It is said that ZnO layers will soon replace indium transparent oxide (ITO) because of high cost and limited supply of indium. Yet there is another very attractive field of ZnO application. It may be used as the n-type partner for the organic materials. There is a bright future in front of the PV cells based on such a hybrid structures for their flexibility and a very low cost of production. The use of ZnO in the novel electronic and PV devices demands low or extremely low processing temperature [2-4]. There are many different technologies used to obtain ZnO layers. These are chemical vapor deposition (CVD), molecular [...]

GaAsN as a photovoltaic material - photoelectrical characterization


  GaAsN and InGaAsN materials have attracted considerable attention due to their unique physical properties and wide range of their possible application in optoelectronics, especially in infrared laser diodes for 1.3 and 1.55 mm [1, 2] and high efficiency multi-junction (MJ) solar sells [3, 4], where these low-band-gap materials can, in principle, be used to efficiently collect the lowphoton- energy portion of the solar spectrum [4]. In this paper the results of studies on the layers of GaAs1-xNx grown on (100)-oriented Si-doped n-type GaAs substrates by atmospheric pressure metal organic vapour phase epitaxy APMOVPE are presented. In the first step the layers of GaAs1-xNx were characterized with the use of optical methods, then Schottky diodes were realized and the rectifying properties of the diodes were studied with electrical methods. The diodes exhibit light-energy conversion effect. Basic parameters of the solar cells ( short-circuit current Isc, open circuit-voltage, Voc, and fill factor, FF) were determined. Obtained results confirm that the diodes are promising as efficien[...]

 Strona 1