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Optical properties of Ti-Al-C-N films: effects of deposition parameters and carbon content DOI:10.15199/48.2018.06.14

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Transition metal nitrides and carbides are attractive materials for technological applications such as hard and high corrosion resistance coatings in machining and cutting tools, diffusion barriers in microelectronics, layers of solar selective absorbers [1-3]. Transition metal carbonitrides Ti-Al-C-N can be considered as perspective materials with high termal stability, exellent oxidation resistance, enchanced mechanical performance and good optical properties. The aim of this study is to investigate the influence of the carbon content and deposition parameters of reactive magnetron sputtering on Ti-Al-C-N films composition, morphology and optical properties. Experimental details The vacuum chamber was pumped down to a base pressure of 5·10-4 Pa. Prior to deposition the substrates were cleaned by ion etching in argon plasma at 6.0·10-2 Pa, wherein the discharge current was 20 mA, the discharge voltage was 2.4 kV, the cleaning time was 5 min. Ti-Al-C-N films have been deposited by a reactive magnetron sputtering of Ti-Al (Al doped with 4% Cu and 1% Si) mosaic target under an environment with a mixture of argon, nitrogen and acetylene gases at the pressure of 0.71 Pa and at the DC power of 450 W. Sublayers of TiAl and TiAlN were deposited onto substrates for the purpose to improve coatings adhesion. The deposition time was 30 min. Silicon and calcium-silicate glass were used as substrates. In order to investigate the influence of deposition parameters on the structural and optical properties of Ti-Al-C-N films, deposition processes were conducted at four different technological regimes presented in Table 1. The elemental composition and structure of the films were determined by energy dispersive X-ray analysis (EDX, X-ray detector manufactured by Princeton Gamma-Tech, Inc) and scanning electron microscopy (Hitachi S-4800), respectively. The phase composition of the films was studied by X-ray diffraction (XRD) [...]

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