Photoelectrical properties of photovoltaic structures based on CdTe/ZnO
Photovoltaics continues to be one of the fastest growing industries,
with annual increase beyond 40% [1]. Photovoltaic (PV)
solar cells convert incoming solar radiation directly into electricity
and produce electricity as each conventional source of energy,
but they are very attractive for they are environment friendly.
Zinc oxide (ZnO) is nowadays worldwide extensively studied
for optoelectronics and photovoltaics application. It is predicted
that there will be a mass production of conducting ZnO layers as
transparent electrodes in solar cells. It is said that ZnO layers will
soon replace indium transparent oxide (ITO) because of high cost
and limited supply of indium. Yet there is another very attractive
field of ZnO application. It may be used as the n-type partner
for the organic materials. There is a bright future in front of the
PV cells based on such a hybrid structures for their flexibility and
a very low cost of production.
The use of ZnO in the novel electronic and PV devices demands
low or extremely low processing temperature [2-4]. There
are many different technologies used to obtain ZnO layers. These
are chemical vapor deposition (CVD), molecular [...]
GaAsN as a photovoltaic material - photoelectrical characterization
GaAsN and InGaAsN materials have attracted considerable attention
due to their unique physical properties and wide range of
their possible application in optoelectronics, especially in infrared
laser diodes for 1.3 and 1.55 mm [1, 2] and high efficiency
multi-junction (MJ) solar sells [3, 4], where these low-band-gap
materials can, in principle, be used to efficiently collect the lowphoton-
energy portion of the solar spectrum [4].
In this paper the results of studies on the layers of GaAs1-xNx
grown on (100)-oriented Si-doped n-type GaAs substrates by atmospheric
pressure metal organic vapour phase epitaxy APMOVPE
are presented. In the first step the layers of GaAs1-xNx were
characterized with the use of optical methods, then Schottky diodes
were realized and the rectifying properties of the diodes were
studied with electrical methods. The diodes exhibit light-energy
conversion effect. Basic parameters of the solar cells ( short-circuit
current Isc, open circuit-voltage, Voc, and fill factor, FF) were
determined. Obtained results confirm that the diodes are promising
as efficien[...]